features z low current z low voltage marking : BCX70J aj, bcx70k:ak maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 45 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current -continuous 200 ma p c collector power dissipation 250 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 45 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =1 a,i c =0 5 v collector cut-off current i ces v ce =45v,v be =0 20 na h fe1 v ce =5v,i c =10 a 30 h fe2 v ce =5v,i c =2ma 250 460 dc current gain BCX70J h fe3 v ce =1v,i c =50ma 90 h fe1 v ce =5v,i c =10 a 100 h fe2 v ce =5v,i c =2ma 380 630 dc current gain bcx70k h fe3 v ce =1v,i c =50ma 100 v ce(sat)1 i c = 10ma i b = 0.25 ma 0.05 0.35 v collector-emitter saturation voltage v ce(sat)2 i c = 50ma i b =1.25 ma 0.1 0.55 v v be(sat)1 i c = 10ma i b =-0.25 ma 0.6 0.85 v base -emitter saturation voltage v be(sat)2 i c = 50ma i b = 1.25 ma 0.7 1.05 v base-emitter voltage v be v ce =5v,i c =2ma 0.55 0.75 v collector output capacitance c ob v cb =10v,i e =0,f=1mhz 1.7 pf noise figure nf v ce =5v,i c =200 a, f=1khz,bw=200hz,rs=2k ? 6 db gain-bandwidth product f t v ce = 5 v, i c =10ma,f =100 mhz 100 250 mhz sot-23 1. base 2. emitter 3. collector bcx7 0j,k transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu bcx7 0j,k
3 date:2011/05 www.htsemi.com semiconductor jinyu bcx7 0j,k
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